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CCSL
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memristor crossbar array

Compensated readout for high-density MOS-gated memristor crossbar array

1 min read · Sun, Apr 26 2015

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Circuits memristor crossbar array

Mohamed Zidan, et al., "Compensated readout for high-density MOS-gated memristor crossbar array." IEEE Transactions on Nanotechnology 14 (1), 2014, 3. Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor

Communication and Computing Systems Lab (CCSL)

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